Reflection high-energy electron diffraction intensity oscillation induced by electric current during Si epitaxial growth on Si (001) 2×1 surfaces

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Abstract
We have observed the oscillations of specular beam intensity of reflection high-energy electron diffraction (RHEED) during Si molecular beam epitaxy on Si (001) 2×1 surfaces. The oscillation modes were measured as a function of incident beam direction, substrate temperature, or especially, dc current direction for resistive heating of the substrate. For the first time in [110] incident beam direction and at a substrate temperature above 450 °C, the phase of specular beam oscillations with the biatomic-layer growth mode can be chosen by the direction of the heating current.