A model for analyzing the interface properties of a semiconductor-insulator-semiconductor structure. I. Capacitance and conductance techniques

This publication has 10 references indexed in Scilit:

• On the optimization of silicon film thickness in thin-film SOI devices
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
• A new technique for determining the generation lifetime profile in thin semiconductor films with application to silicon-on-insulator (SOI) substrates
  IEEE Electron Device Letters, 1989
• Characterization of front and back Si-SiO/sub 2/ interfaces in thick- and thin-film silicon-on-insulator MOS structures by the charge-pumping technique
  IEEE Transactions on Electron Devices, 1989
• Suppression of drain-current overshoot in SOI-MOSFETs using an ultrathin SOI substrate
  Electronics Letters, 1988
• Determination of the fixed oxide charge and interface trap densities for buried oxide layers formed by oxygen implantation
  Applied Physics Letters, 1988
• Static and dynamic transconductance model for depletion-mode transistors: a new characterization method for silicon-on-insulator materials
  IEEE Electron Device Letters, 1988
• The effects of oxygen dose on the formation of buried oxide silicon-on-insulator
  Journal of Applied Physics, 1987
• Schedule
  IEEE Circuits and Devices Magazine, 1987
• Profiling of inhomogeneous carrier transport properties with the influence of temperature in silicon-on-insulator films formed by oxygen implantation
  Journal of Applied Physics, 1986
• Capacitance-voltage characteristics of Semiconductor-Insulator-Semiconductor (SIS) structure
  Solid-State Electronics, 1985