Y2O3-Stabilized ZrO2 Thin Films Prepared by Metalorganic Chemical Vapor Deposition

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Abstract
Zirconia films stabilized by Y2O3 were deposited by metal-organic chemical vapor techniques onto various crystalline substrates. Y2O3, ZrO2 and mixtures of these two were deposited and characterized. The deposition rate, the film composition and the structure could be systematically varied through the Y(C11H19O2)3, Zr(O·t-C4H9)4 and O2 source gas ratios and the substrate temperature. The Y/Zr ratio could be adjusted by controlling the ratio in Y(C11H19O2)3 to Zr(O·t-C4H9)4 partial pressures. However, the Y/Zr ratio was found to be smaller than that estimated based on the deposition rates of unmixed Y2O3 and ZrO2 films. The activation energy of the Y2O3 component in YSZ film growth was similar to that of the ZrO2 component in YSZ films. These YSZ values were more than 4 times larger than those of unmixed Y2O3 or ZrO2 films.