Depth profiles of arsenic in semiconductor silicon by chemical etching and non-dispersive atomic fluorescence spectrometry with hydride generation

This publication has 19 references indexed in Scilit:

• Polarographic evaluation of arsenic profiles in silicon
  Analytica Chimica Acta, 1979
• Spectrophotometric evaluation of phosphorus profiles in silicon
  Analytica Chimica Acta, 1979
• Mechanism of Arsenic Diffusion into Silicon from Arsenic‐Doped Oxide Source
  Journal of the Electrochemical Society, 1977
• Relationship between resistivity and phosphorus concentration in silicon
  Journal of Applied Physics, 1974
• The determination of arsenic by non-dispersive atomic fluorescence spectrometry with a gas sampling technique
  Analytica Chimica Acta, 1974
• Concentration profiles of implanted phosphorus in silicon
  Physica Status Solidi (a), 1974
• An automated radiochemical technique for measurement of impurity concentration profiles
  Nuclear Instruments and Methods, 1973
• Technique used in Hall effect analysis of ion implanted Si and Ge
  Solid-State Electronics, 1970
• Detailed analysis of thin phosphorus-diffused layers in p-type silicon
  Solid-State Electronics, 1961
• Measurement of Sheet Resistivities with the Four-Point Probe
  Bell System Technical Journal, 1958