Arsine Ambient Rapid Thermal Annealing
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Initial evaporation rates from GaAs during rapid thermal processingJournal of Applied Physics, 1988
- Ion implantation and annealing of undoped (Al,Ga)As/GaAs heterostructuresApplied Physics Letters, 1987
- Temperature Transients of Ion‐Implanted Silicon Wafers during Rapid Thermal AnnealingJournal of the Electrochemical Society, 1987
- Plasma Deposited Silicon Nitride for Gallium Arsenide EncapsulationJournal of the Electrochemical Society, 1987
- Temperature Response of GaAs in a Rapid Thermal Annealing SystemJournal of the Electrochemical Society, 1986
- Diffusion phenomena and defect generation in rapidly annealed GaAsJournal of Applied Physics, 1985
- Rapid capless annealing of28Si,64Zn, and9Be implants in GaAsJournal of Electronic Materials, 1984