K-Band High-Power GaAs FET Amplifiers
- 1 April 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 29 (4) , 309-313
- https://doi.org/10.1109/tmtt.1981.1130349
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Microwave GaAs Power FET Amplifiers with Lumped-Element Impedance Matching NetworksPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- 15-Watt Internally Matched GaAs FETs and 20-Watt Amplifier Operating at 6 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- A 30-GHz GaAs FET AmplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- A 12-GHz 1-W GaAs MESFET AmplifierIEEE Transactions on Microwave Theory and Techniques, 1979
- Flip-Chip Mounted GaAs Power Fet with Improved Performance in X to Ku BandPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1979
- Ku- and K-band internally matched high-power GaAs f.e.t. amplifiersElectronics Letters, 1979
- GaAs power m.e.s.f.e.t.s. with a graded recess structureElectronics Letters, 1979
- 11 GHz and 12 GHz multiwatt internal matching for power GaAs f.e.t.sElectronics Letters, 1979
- 14-GHz band 1 watt GaAs f.e.t. amplifierElectronics Letters, 1979