Electron‐beam test system for high‐speed devices
- 1 January 1987
- Vol. 9 (5) , 201-204
- https://doi.org/10.1002/sca.4950090504
Abstract
No abstract availableFunding Information
- EEC's Esprit Program (843)
This publication has 11 references indexed in Scilit:
- Planar and spherical retarding-field spectrometers for electron-beam testing: Evaluation and comparisonMicroelectronic Engineering, 1987
- Electron beam testingMicroelectronic Engineering, 1986
- E-beam testing of high-speed electronic devicesMicroelectronic Engineering, 1986
- Magnetic field extraction of secondary electrons for accurate integrated circuit voltage measurementJournal of Vacuum Science & Technology B, 1986
- Analysis of the transit time effect on the stroboscopic voltage contrast in the scanning electron microscopeJournal of Physics D: Applied Physics, 1985
- In-the-lens secondary electron analyser for IC internal voltage measurements with electron beamsElectronics Letters, 1984
- Fundamentals of electron beam testing of integrated circuitsScanning, 1983
- Electron beam testing: Methods and applicationsScanning, 1983
- Waveform measurements on gigahertz semiconductor devices by scanning electron microscope stroboscopyApplied Physics Letters, 1981
- Gigahertz stroboscopy with the scanning electron microscopeReview of Scientific Instruments, 1978