Surface irregularities of MBE grown cubic GaN layers
- 1 February 1999
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 197 (1-2) , 31-36
- https://doi.org/10.1016/s0022-0248(98)00902-6
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- An Accurate Method to Determine the Growth Conditions during Molecular Beam Epitaxy of Cubic GaNMaterials Science Forum, 1998
- Growth and characterization of cubic GaNJournal of Crystal Growth, 1997
- The near band edge photoluminescence of cubic GaN epilayersApplied Physics Letters, 1997
- Selective meltback etching of GaN layers in liquid-phase electroepitaxial techniqueJournal of Crystal Growth, 1997
- Melt-back etching of GaNSolid-State Electronics, 1997
- Microstructural characterisation of GaN(As) films grown on (001) GaP by molecular beam epitaxyJournal of Crystal Growth, 1997
- Epitaxial growth and optical transitions of cubic GaN filmsPhysical Review B, 1996
- Surface reconstructions of zinc-blende GaN/GaAs(001) in plasma-assisted molecular-beam epitaxyPhysical Review B, 1995
- Solubility of III–V Compound Semiconductors in Column III LiquidsJournal of the Electrochemical Society, 1963