Deep level associated with the slow degradation of GaAlAs DH laser diodes
- 15 August 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (4) , 330-332
- https://doi.org/10.1063/1.90359
Abstract
The deep‐level emission at 1.0 eV is analyzed to be associated with the slow degradation of GaAlAs DH laser diodes. The intensity of this deep‐level emission increases at the same rate as the increase in the threshold current during the slow degradation. The carrier lifetime does not change correspondingly to the increase in the threshold current. This deep level is considered to act as the photon‐absorption center to cause the increase in the threshold current.Keywords
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