Effects of advanced processes on hot carrier reliability
- 1 January 1998
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
There are several advanced processes which are being actively studied as candidates for sub-0.25 /spl mu/m technology and beyond. This paper studies the effects on hot carrier reliability from remote plasma nitrided oxide (RPNO), deuterium anneal and pocket implant. It is found that RPNO can improve the hot carrier reliability by making the effective oxide thickness thinner for oxides of the same physical thickness. The deuterium anneal can improve the hot carrier reliability, even with nitride sidewalls if proper annealing is done. While the pocket implant can reduce short channel effects, the hot carrier lifetime is degraded unless optimization is conducted.Keywords
This publication has 6 references indexed in Scilit:
- Ultrathin nitrogen-profile engineered gate dielectric filmsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Surface nitridation of silicon dioxide with a high density nitrogen plasmaJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1997
- A 0.18/spl mu/m CMOS Process Using Nitrogen Profile-engineered Gate DielectricsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1997
- Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processingApplied Physics Letters, 1996
- Quarter-micrometer SPI (Self-aligned Pocket Implantation) MOSFET's and its application for low supply voltage operationIEEE Transactions on Electron Devices, 1995
- The effects of boron penetration on p/sup +/ polysilicon gated PMOS devicesIEEE Transactions on Electron Devices, 1990