Pressure-induced shallow-to-deep donor-state transition inGaAs observed by Mössbauer spectroscopy
- 27 August 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 65 (9) , 1144-1147
- https://doi.org/10.1103/physrevlett.65.1144
Abstract
The Sn DX center in GaAs, a deep donor state of Sn, has been observed by Mössbauer measurements at high pressure. The size of the pressure-induced Sn DX Mössbauer resonance compared to the net conduction-electron concentration at zero pressure provides evidence that the Sn DX center localizes two or three electrons in the ground state.Keywords
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