H/sup +/ motion in SiO/sub 2/: incompatible results from hydrogen-annealing and radiation models

This publication has 29 references indexed in Scilit:

• BOX quality as measured by hydrogen-anneal-induced positive charge transport
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Positive charging of thermal SiO2/(100)Si interface by hydrogen annealing
  Applied Physics Letters, 1998
• Irradiation response of mobile protons in buried SiO/sub 2/ films
  IEEE Transactions on Nuclear Science, 1997
• Protonic nonvolatile field effect transistor memories in Si/SiO/sub 2//Si structures
  IEEE Transactions on Nuclear Science, 1997
• Mechanism for anneal-induced interfacial charging in SiO2 thin films on Si
  Applied Physics Letters, 1996
• Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing
  Applied Physics Letters, 1996
• Passivation and depassivation of silicon dangling bonds at the Si/SiO2 interface by atomic hydrogen
  Applied Physics Letters, 1993
• Electron and hole trapping in irradiated SIMOX, ZMR and BESOI buried oxides
  IEEE Transactions on Nuclear Science, 1992
• The time-dependence of post-irradiation interface trap build-up in deuterium-annealed oxides (n-MOSFET)
  IEEE Transactions on Nuclear Science, 1992
• The effect of high temperature hydrogen annealing on SOS films
  Journal of Crystal Growth, 1982