Experimental studies of the multimode spectral emission in quantum dot lasers
- 28 January 2000
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 87 (4) , 1943-1946
- https://doi.org/10.1063/1.372117
Abstract
We investigate the electroluminescence spectra of edge-emitting lasers having self-assembled quantum dots as the active medium. A broad laser emission is observed with a modulation of intensity corresponding to single or bunches (supermodes) of Fabry–Pérot modes. The variation of the laser spectra with magnetic field shows that the supermodes originate from laser cavity effects and are not related directly to the electronic properties of the quantum dots. Measurements taken on devices of different cavity height, length, and lateral width indicate that the important parameter controlling the laser multimode emission is the cavity height, effectively the substrate thickness. In particular, the period of the supermodes is inversely proportional to this thickness, indicating that the modulation of the laser emission intensity is due to the leakage of modes into the transparent substrate.This publication has 24 references indexed in Scilit:
- High-temperature light emission from InAs quantum dotsApplied Physics Letters, 1999
- Light emission spectra of columnar-shaped self-assembled InGaAs/GaAs quantum-dot lasers: Effect of homogeneous broadening of the optical gain on lasing characteristicsApplied Physics Letters, 1999
- 1.3 μm room-temperature GaAs-based quantum-dot laserApplied Physics Letters, 1998
- Longitudinal mode grouping in InGaAs/GaAs/AlGaAsquantum dot lasers: Origin and means of controlElectronics Letters, 1998
- Red-light-emitting injection laser based on InP/GaInP self-assembled quantum dotsApplied Physics Letters, 1998
- Optical properties and device applications of (InGa)As self-assembled quantum dots grown on (311)B GaAs substratesApplied Physics Letters, 1998
- InGaAs/GaAs Quantum Dot Lasers with Ultrahigh Characteristic Temperature (T 0= 385 K) Grown by Metal Organic Chemical Vapour DepositionJapanese Journal of Applied Physics, 1997
- Room-temperature operation of In 0.4 Ga 0.6 As/GaAsself-organised quantum dot lasersElectronics Letters, 1996
- Inhomogeneous line broadening and the threshold current density of a semiconductor quantum dot laserSemiconductor Science and Technology, 1996
- Waveguiding properties of heterolasers based on InGaAs/GaAs strained quantum-well structures and characteristics of their gain spectraQuantum Electronics, 1994