4H-SiC power bipolar junction transistor with a very low specific ON-resistance of 2.9 m/spl Omega//spl middot/cm/sup 2/

1 May 2006

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 27 (5) , 368-370
https://doi.org/10.1109/led.2006.873370

Abstract

This letter reports a newly achieved best result on the specific ON-resistance (R/sub SP/spl I.bar/ON/) of power 4H-SiC bipolar junction transistors (BJTs). A 4H-SiC BJT based on a 12-μm drift layer shows a record-low specific-ON resistance of only 2.9 m/spl Omega//spl middot/cm ² , with an open-base collector-to-emitter blocking voltage (V/sub ceo/) of 757 V, and a current gain of 18.8. The active area of this 4H-SiC BJT is 0.61 mm ² , and it has a fully interdigitated design. This high-performance 4H-SiC BJT conducts up to 5.24 A at a forward voltage drop of V/sub CE/=2.5 V, corresponding to a low R/sub SP-ON/ of 2.9 m/spl Omega//spl middot/cm ² up to J/sub c/=859 A/cm ² . This is the lowest specific ON-resistance ever reported for high-power 4H-SiC BJTs.

Keywords

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