Remote plasma hydrogenation of ion beam amorphized silicon
- 5 August 1991
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (6) , 718-720
- https://doi.org/10.1063/1.105375
Abstract
In this investigation, the efficacy of remote plasma hydrogenation, in the passivation of bonding and other electronic defects in amorphous silicon, has been compared with those of ion beam and radio-frequency plasma hydrogenations. The amorphous silicon film was obtained by amorphization of the subsurface of ultrapure crystalline silicon by a Si ion beam. Electrical measurements indicated remote plasma hydrogenation to be a promising low- temperature defect removal technique, without the damaging effect of a plasma or the etching effects of low-energy hydrogen ions.Keywords
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