A survey of second breakdown
- 1 August 1966
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. ED-13 (8/9) , 613-618
- https://doi.org/10.1109/t-ed.1966.15746
Abstract
The existence of a "new high-current mode of transistor operation," now generally known as second breakdown, was first reported by Thornton and Simmons in 1958 and was used to explain the mysterious failures that were observed to occur under certain operating conditions. Since then, with the production of higher power and higher frequency transistors, the problems resulting from the existence of second breakdown have proliferated. Interest in the phenomenon has grown concurrently and many papers about second breakdown can be found in the literature. These papers cover a range of interest that extends from theoretical studies of the basic mechanisms involved to interpretations of specifications for transistor operation free of second breakdown. A complete understanding of second breakdown has not yet been achieved and several concepts of second breakdown prevail. The purpose of this paper is to review historically the work that has been reported in order to present a coherent and comprehensive picture of the present status of second breakdown.Keywords
This publication has 14 references indexed in Scilit:
- Second breakdown and current distributions in transistorsSolid-State Electronics, 1966
- Fine structure and electromagnetic radiation in second breakdownIEEE Transactions on Electron Devices, 1964
- Secondary breakdown in transistorsProceedings of the IEEE, 1964
- Common emitter breakdownIEEE Transactions on Electron Devices, 1963
- Mesoplasmas and “second breakdown” in silicon junctionsSolid-State Electronics, 1963
- Mesoplasma breakdown in silicon junctionsProceedings of the IEEE, 1963
- "Second breakdown" in transistorsIRE Transactions on Electron Devices, 1962
- Transient operation of transistor with inductive loadIRE Transactions on Electron Devices, 1960
- Thermal Breakdown in SiliconJunctionsPhysical Review B, 1957
- High Inverse Voltage Germanium RectifiersJournal of Applied Physics, 1949