Liquid phase epitaxial growth of Fe-doped semi-insulating InGaAsP lattice matched to InP over the entire composition range

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Abstract
Fe‐doped semi‐insulating In1−x Gax Asy P1−y (0≤y≤1, y=2.2x) epitaxial layers lattice matched to InP with nearly intrinsic carrier concentrations have been successfully grown over the entire composition range by liquid phase epitaxy. Maximum resistivities as high as 8×107 Ω cm for InP, 2×105 Ω cm for InGaAsP (y=0.57), and 2×103 Ω cm for InGaAs (y=1) have been achieved. The critical growth temperature necessary to obtain semi‐insulating layers significantly decreased as the composition was varied from y=0 to y=1. The Fe doping characteristics are well defined by the composition dependence of the Fe distribution coefficient.