Remarkable reduction of threshold current density by substrate misorientation effects in 660 nm visible light lasers with GaInP bulk active layers

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Abstract
660 nm wavelength GaInP/AlInP visible lasers with 60 nm thick GaInP active layers were grown on misoriented (100) GaAs substrates by gas source molecular beam epitaxy. A remarkable reduction in threshold current density Jth was observed with increasing substrate misorientation angle (SMA) from the (100) surface toward the [011] direction. Jth was 1.23 kA/cm2 on average for SMA of 0°, and 841 A/cm2 for SMA of 15° (both cavity lengths were 600 μm). For 1.1 mm long cavity lasers, a minimum Jth was 702 A/cm2 which was obtained for ordinary bulk-crystal active layers without strain and quantum-well effects. Such misorientation effects on reduction of Jth was systematically discussed in relation to various lasing parameters.