Influence of molecular hydrogen on Ge island nucleation on Si(001)
- 1 November 2000
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 88 (9) , 5113-5118
- https://doi.org/10.1063/1.1317245
Abstract
The influence of molecular hydrogen (H(2)) on the structural and optical properties of self-assembled Ge dots grown on Si(001) has been studied using atomic force microscopy and photoluminescence spectroscopy (PL). Without hydrogen, a well known bimodal island size distribution occurs with small {105} faceted pyramids, and larger multifaceted domes. In the presence of an additional H(2) flow, we observe that a higher density of smaller pyramids and a lower density of domes occurs. Moreover, in the presence of hydrogen, PL investigations have revealed a thicker wetting layer thickness, probably due to a reduction of the surface diffusion length. (C) 2000 American Institute of Physics. [S0021-8979(00)07822-1].This publication has 26 references indexed in Scilit:
- Hydrogen interaction with clean and modified silicon surfacesSurface Science Reports, 1999
- The influence of hydrogen during the growth of Ge films on Si(001) by solid source molecular beam epitaxySurface Science, 1998
- Shape Transition of Germanium Nanocrystals on a Silicon (001) Surface from Pyramids to DomesScience, 1998
- Effect of atomic hydrogen on the growth of Ge/Si(100)Journal of Vacuum Science & Technology A, 1997
- Growth and characterization of self-assembled Ge-rich islands on SiSemiconductor Science and Technology, 1996
- Ge growth on Si using atomic hydrogen as a surfactantApplied Physics Letters, 1994
- Growth morphology and the equilibrium shape: The role of ‘‘surfactants’’ in Ge/Si island formationPhysical Review Letters, 1993
- Are bare surfaces detrimental in epitaxial growth?Applied Physics Letters, 1991
- Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)Physical Review Letters, 1990
- Dislocation-free Stranski-Krastanow growth of Ge on Si(100)Physical Review Letters, 1990