The influence of hydrogen during the growth of Ge films on Si(001) by solid source molecular beam epitaxy
- 1 May 1998
- journal article
- Published by Elsevier in Surface Science
- Vol. 402-404, 211-214
- https://doi.org/10.1016/s0039-6028(97)01017-0
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Effect of atomic hydrogen on the growth of Ge/Si(100)Journal of Vacuum Science & Technology A, 1997
- The influence of additional atomic hydrogen on the monolayer growth of Ge on Si(100) studied by STMApplied Surface Science, 1997
- Surfactant effect of H atoms on the suppression of Ge segregation in Si overgrowth on Ge(n ML)/Si(100) substrates by gas source molecular beam epitaxyJournal of Crystal Growth, 1995
- STM study of the Ge growth mode on Si(001) substratesApplied Surface Science, 1994
- H coverage dependence of Si(001) homoepitaxyPhysical Review Letters, 1994
- Ge growth on Si using atomic hydrogen as a surfactantApplied Physics Letters, 1994
- Effect of hydrogen on surface roughening during Si homoepitaxial growthApplied Physics Letters, 1993
- Effect of H on Si molecular-beam epitaxyJournal of Applied Physics, 1993
- Are bare surfaces detrimental in epitaxial growth?Applied Physics Letters, 1991
- Electronic structure of Ge/Si monolayer strained-layer superlatticesPhysical Review B, 1989