Insiturepair of optoelectronic devices with femtosecond laser pulses

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Abstract
This letter demonstrates an application of femtosecond laser ablation to eliminate the effect of crystallographic defects on optoelectronic devices. These defects can electrically shunt the devices and, in some applications, it is of great importance to circumvent the limitations due to these defects. On a large-area light-emitting diode, we show that laser ablation is an ideal treatment technique to eliminate the effect of defects. We found that laser surgery on light-emitting diodes is an easy technique to implement. It allows an in situ repair of defective areas.