Si incorporation in InP using a disilane source in metalorganic vapour phase epitaxy at atmospheric pressure
- 31 March 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 94 (3) , 762-766
- https://doi.org/10.1016/0022-0248(89)90101-2
Abstract
No abstract availableKeywords
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