Silicon doping in InP grown by molecular beam epitaxy
- 15 October 1983
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (8) , 780-782
- https://doi.org/10.1063/1.94503
Abstract
Silicon‐doped InP layers were grown on (100) InP substrates by molecular beam epitaxy (MBE), and compared with MBE grown Sn‐doped InP layers. Room‐temperature electron concentrations up to ∼1×1019 cm−3 were successfully achieved with good doping controllability. The electrical optical properties of Si‐doped InP layers were comparable with those of Sn‐doped InP layers. These results show that Si is a useful n‐type dopant in MBE growth of InP layers, especially to obtain abrupt doping profiles.Keywords
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