Fabrication and High-Temperature Characteristics of Ion-Implanted GaAs Bipolar Transistors and Ring-Oscillators
- 1 May 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Industrial Electronics
- Vol. IE-29 (2) , 136-139
- https://doi.org/10.1109/tie.1982.356650
Abstract
GaAs bipolar transistors and ring-oscillators were fabricated by ion implantation into VPE structures. The transistor and circuit performance was tested between 25°C and 400°C. Leakage currents determine the useful temperature range. Present GaAs circuits fail at approximately 390°C due to the metallization technology.Keywords
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