Oxidation and stress relief in air at room temperature of amorphous silicon hydrogenated in a glow discharge
- 30 September 1985
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 28 (9) , 893-901
- https://doi.org/10.1016/0038-1101(85)90081-4
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Oxidation of glow discharge a-Si:HSolid-State Electronics, 1982
- Hydrogen content and mechanical stress in glow discharge amorphous siliconNuclear Instruments and Methods in Physics Research, 1982
- SiSiO2 interface characterization by ESCASurface Science, 1979
- Effect of annealing on the optical properties of plasma deposited amorphous hydrogenated siliconSolar Energy Materials, 1979
- Thermal stresses and cracking resistance of dielectric films (SiN, Si3N4, and SiO2) on Si substratesJournal of Applied Physics, 1978