Absorption Saturation of Excitons in GaAs-AlAs Multi-Quantum-Well Structures
- 15 January 1986
- journal article
- letter
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 55 (1) , 57-60
- https://doi.org/10.1143/jpsj.55.57
Abstract
Absorption saturation of the lowest excitons under the high density excitation is studied in GaAs-AlAs multi-quantum-well structures. Saturation characteristics remarkably depend on the well layer thickness ranging from 53Å to 154Å. These saturation characteristics and possible mechanisms are discussed.Keywords
This publication has 15 references indexed in Scilit:
- Direct experimental observation of two-dimensional shrinkage of the exciton wave function in quantum wellsPhysical Review B, 1985
- Ultrafast relaxation of excitons in GaAs-AlAs multi-quantum-well structures studied by resonant Rayleigh-type optical mixingOptics Communications, 1985
- Femtosecond Dynamics of Resonantly Excited Excitons in Room-Temperature GaAs Quantum WellsPhysical Review Letters, 1985
- Exciton binding energy in GaAs quantum wells deduced from magneto-optical absorption measurementSolid State Communications, 1984
- Blue Shift of the Exciton Resonance due to Exciton-Exciton Interactions in a Multiple-Quantum-Well StructurePhysical Review Letters, 1984
- Transient Optical Spectra of a Dense Exciton Gas in a Direct-Gap SemiconductorPhysical Review Letters, 1982
- Large room-temperature optical nonlinearity in GaAs/Ga1−x AlxAs multiple quantum well structuresApplied Physics Letters, 1982
- Room-temperature excitonic optical bistability in a GaAs-GaAlAs superlattice étalonApplied Physics Letters, 1982
- Optical characterization of interface disorder in multi-quantum well structuresSolid State Communications, 1981
- Optical properties of highly excited direct gap semiconductorsPhysics Reports, 1981