State-of-the-art issues for technology and circuit design of ESD protection in CMOS ICs
- 1 June 1996
- journal article
- review article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 11 (6) , 833-850
- https://doi.org/10.1088/0268-1242/11/6/001
Abstract
This is a review paper that discusses the state-of-the-art issues for electrostatic discharge (ESD) protection devices. The important device physics of the protection devices, the device phenomena under high-current ESD events, the effects of process technology and advanced scaling effects are discussed. Some description of the advanced protection scheme designs and their performance for the various ESD stress models are presented. The main focus of the paper is on the impact of technology on ESD design and the critical issues facing the ability to achieve good ESD reliability as the technologies advance into the deep sub-micron regimes.Keywords
This publication has 15 references indexed in Scilit:
- ESD: a pervasive reliability concern for IC technologiesProceedings of the IEEE, 1993
- Self-heating effects in basic semiconductor structuresIEEE Transactions on Electron Devices, 1993
- Improving the ESD failure threshold of silicided n-MOS output transistors by ensuring uniform current flowIEEE Transactions on Electron Devices, 1992
- ESD failure modes: characteristics mechanisms, and process influencesIEEE Transactions on Electron Devices, 1992
- A low-voltage triggering SCR for on-chip ESD protection at output and input padsIEEE Electron Device Letters, 1991
- Diffused resistors characteristics at high current density levels-analysis and applicationsIEEE Transactions on Electron Devices, 1989
- NMOS protection circuitryIEEE Transactions on Electron Devices, 1985
- Electrical Overstress Failure Modeling for Bipolar Semiconductor ComponentsIEEE Transactions on Components, Hybrids, and Manufacturing Technology, 1978
- Bipolar transistor modeling of avalanche generation for computer circuit simulationIEEE Transactions on Electron Devices, 1975
- Second breakdown and damage in junction devicesIEEE Transactions on Electron Devices, 1973