Dynamics-Induced Surface Metallization of Si(100)
- 28 October 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 77 (18) , 3869-3872
- https://doi.org/10.1103/physrevlett.77.3869
Abstract
High-temperature surface metallization of Si(100) is observed at by high-resolution electron-energy-loss and ultraviolet photoemission spectroscopy. Metallization takes place well below the incomplete surface melting temperature and is consistent with the Si dimer dynamics, characterized by an instantaneous symmetriclike dimer configuration. The surface free carrier concentration in the metallic phase has been evaluated, reaching (at 1170 K) the same order of magnitude of the surface dimer density.
Keywords
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