Nanovoids in InGaAs∕GaAs quantum dots observed by cross-sectional scanning tunneling microscopy
- 25 October 2004
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 85 (17) , 3848-3850
- https://doi.org/10.1063/1.1808884
Abstract
We present cross-sectional scanning tunneling microscopy data of a type of InGaAs∕GaAs quantum-dot structure characterized by a hollow center. This void structure develops during a long growth interruption applied after deposition of a quantum dot layer and a thin cap layer, resulting in an eruption of indium-rich material. Subsequent fast overgrowth does not fill the void completely. This growth behavior demonstrates limitations of current strategies to grow large quantum dots.This publication has 13 references indexed in Scilit:
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