Diffusion Barrier Effects Against Cu of W-N Layer Formed by Electron Cyclotron Resonance Plasma Nitridation on W Layer
- 1 April 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (4R)
- https://doi.org/10.1143/jjap.34.1827
Abstract
To improve the diffusion barrier effects of W against Cu, W-N/W multilayers formed by electron cyclotron resonance (ECR) N2 plasma exposure on W layers were investigated. Cu/W-N/W/Si multilayer structures were measured using secondary ion mass spectroscopy (SIMS), Rutherford backscattering spectroscopy (RBS), Auger electron spectroscopy (AES), and electric resistance change. The W-N/W films showed a dramatic improvement in barrier properties over those of metallic W films. When the thickness of the W-N/W barrier layer was only 5 nm, the Cu/W-N/W/Si multilayer retained the multilayer structure even after annealing at 873 K for 1 h in H2 without increase of resistivity. The thickness of the W-N layer formed by ECR plasma nitridation was less than 1-2 nm, which provided an excellent barrier effect.Keywords
This publication has 12 references indexed in Scilit:
- Low resistivity body-centered cubic tantalum thin films as diffusion barriers between copper and siliconJournal of Vacuum Science & Technology A, 1992
- Tantalum as a diffusion barrier between copper and silicon: Failure mechanism and effect of nitrogen additionsJournal of Applied Physics, 1992
- Reaction of Cu-Ti bilayer films in vacuum and hydrogenJournal of Applied Physics, 1992
- Diffusion in Ni/Cu bilayer filmsApplied Physics Letters, 1992
- Performance of W100−xNx diffusion barriers between 〈Si〉 and CuApplied Surface Science, 1991
- Tantalum-based diffusion barriers in Si/Cu VLSI metallizationsJournal of Applied Physics, 1991
- Controlled ion beam sputter deposition of W/Cu/W layered films for microelectronic applicationsJournal of Vacuum Science & Technology A, 1991
- Effects of oxygen in TiNx on the diffusion of Cu in Cu/TiN/Al and Cu/TiNx/Si structuresApplied Physics Letters, 1991
- Multicarrier trapping by copper microprecipitates in siliconPhysical Review Letters, 1989
- Diffusion of Metals in Silicon DioxideJournal of the Electrochemical Society, 1986