pn-Schottky Hybrid Cold-Cathode Diode
- 1 December 1971
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 19 (11) , 497-498
- https://doi.org/10.1063/1.1653789
Abstract
The device is a forward‐biased GaAs0.6P0.4 pn‐junction diode whose thin p layer is coated with a cesiated film of either Ag or Au 100–300 Å thick. In some cases the diodes are heat treated at 250 °C before cesiation. A cathodic emission efficiency of 1.4% is obtained at 10 A cm−2 for a heat‐treated diode with a 100‐Å‐thick Au film. The emission is uniform over the coated surface and is proportional to exp(qV/kT). Preliminary data indicate long life for the device when operated in an ambient of Cs vapor.Keywords
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