Transient annealing of planar waveguides formed by 4He+ ion implantation into LiNbO3
- 1 September 1986
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 98 (1-4) , 227-231
- https://doi.org/10.1080/00337578608206113
Abstract
Ion implantation with MeV 4He+ ions has been used by several workers to fabricate planar optical waveguides in LiNbO3. The process of fabrication of these waveguides includes a 30 min furnace anneal in oxygen to remove the radiation damage from the guiding layer and to replace oxygen lost during implantation. In this work a transient anneal schedule on LiNbO3 was followed. The annealing time is reduced and the attenuation of these waveguides found to be an order of magnitude lower than identical waveguides annealed by conventional methods. Waveguides implanted with single energy ions with losses as low as 0.2 dB/cm at 0.633 μm have been produced.Keywords
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