The dependence of room-temperature photoluminescence efficiency of Si-doped AlxGa1−xAs on the flux ratio used during growth by molecular-beam epitaxy
- 1 November 1984
- journal article
- Published by Elsevier in Materials Letters
- Vol. 3 (1-2) , 63-66
- https://doi.org/10.1016/0167-577x(84)90017-x
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
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