Degradation and Recovery of Boron Doped Strained Silicon Germanium Layers After 1-MeV Electron Irradiation
- 1 January 1992
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Evidence of the influence of heavy-doping induced bandgap narrowing on the collector current of strained SiGe-base heterojunction bipolar transistorsMicroelectronic Engineering, 1992
- 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistorsIEEE Electron Device Letters, 1990
- Optical window in strained-layer Si/Ge microstructuresApplied Physics Letters, 1989
- Effect of lattice defects in the collector region of npn Si transistors on the degradation ofhFEPhysica Status Solidi (a), 1988
- Physics and applications of GexSi1-x/Si strained-layer heterostructuresIEEE Journal of Quantum Electronics, 1986
- Super Recovery of Total Dose Damage in MOS DevicesIEEE Transactions on Nuclear Science, 1984
- X-ray photoelectron spectroscopy study of radiation-damaged Si-SiO2 interfacesJournal of Applied Physics, 1983