Measurements and modeling of MOSFET I-V characteristics with polysilicon depletion effect
- 1 January 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 40 (12) , 2330-2337
- https://doi.org/10.1109/16.249483
Abstract
The authors study the degradation of MOSFET current-voltage (V-I) characteristics as a function of polysilicon gate concentration (Np ), oxide thickness (tox) and substrate impurity concentration (ND) using measured and modeled results. Experimentally it is found that for MOSFETs with thin gate oxide (tox≈70 Å) and high substrate concentration (ND ≈1.6×1017 cm-3) the reduction in the drain current IDS can be as large as 10% to 20% for devices with insufficiently doped polysilicon gate (5×1018 ⩽Np⩽1.6×1019 cm-3). Theoretically it is shown that the drain current degradation becomes more pronounced as Np decreases, tox decreases, or ND, increases. A modified Pao-Sah model that takes into account the polysilicon depletion effect and an accurate gate-field-dependent mobility model are used to compute I-V characteristics for various values of Np, tox, and ND. Good agreement between experimental and modeled results is observed over a wide range of devicesKeywords
This publication has 24 references indexed in Scilit:
- Effect of polysilicon depletion on MOSFET I–V characteristicsElectronics Letters, 1993
- A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1−x strained layersSolid-State Electronics, 1991
- Measurements and modeling of the n-channel MOSFET inversion layer mobility and device characteristics in the temperature range 60-300 KIEEE Transactions on Electron Devices, 1990
- The effects of boron penetration on p/sup +/ polysilicon gated PMOS devicesIEEE Transactions on Electron Devices, 1990
- MOS flat-band capacitance method at low temperaturesIEEE Transactions on Electron Devices, 1989
- Dependence of the work-function difference between the polysilicon gate and silicon substrate on the doping level in polysiliconIEEE Transactions on Electron Devices, 1985
- An Efficient Numerical Algorithm for Simulation of MOS CapacitanceIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1983
- Approximations for Fermi-Dirac integrals, especially the function F12(η) used to describe electron density in a semiconductorSolid-State Electronics, 1982
- A New Method to Determine Effective MOSFET Channel LengthJapanese Journal of Applied Physics, 1979
- Characterization of the electron mobility in the inverted Si surfacePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1979