The physics of ONO layer dielectrics
- 1 October 1989
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 39 (1-4) , 192-199
- https://doi.org/10.1016/0169-4332(89)90433-9
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- ONO technologyApplied Surface Science, 1989
- Lifetime of thin oxide and oxide-nitride-oxide dielectrics within trench capacitors for DRAMsIEEE Transactions on Electron Devices, 1989
- Electronic processes in silicon nitrideJournal of Applied Physics, 1987
- Interfacial tunneling barrier heights in triple-layer dielectricsApplied Surface Science, 1987
- Conduction properties of silicon dioxide in oxide-nitride-oxide structuresSolid-State Electronics, 1987
- Study of carrier trapping in stacked dielectricsIEEE Electron Device Letters, 1986
- Determination of the Fowler-Nordheim tunneling barrier from nitride to oxide in oxide:nitride dual dielectricIEEE Electron Device Letters, 1986
- Charge transport and trapping in silicon nitride-silicon dioxide dielectric double layersJournal of Applied Physics, 1985
- Gap states in silicon nitrideApplied Physics Letters, 1984
- Potential of alternate dielectrics for single and composite film FET gate applicationsJournal of Electronic Materials, 1975