Frequency resolved admittance spectroscopy measurements on In0.52Al0.48As/InxGa1−xAs/In0.52Al0.48As single quantum well structures

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Abstract
In this work a new admittance spectroscopy technique is proposed to determine the conduction band offset in single quantum well structures (SQW). The proposed technique is based on the study of the capacitance derivative versus the frequency logarithm. This method is found to be less sensitive to parasitic effects, such as leakage current and series resistance, than the classical conductance analysis. Using this technique, we have determined the conduction band offset in In0.52Al0.48As/In x Ga1−x As/In0.52Al0.48As SQW structures. Two different well compositions, x=0.53, which corresponds to the lattice‐matched case and x=0.60, which corresponds to a strained case, and two well widths (5 and 25 nm) have been considered. The average results are ΔE c =0.49±0.04 eV for x=0.53 and ΔE c =0.51±0.04 eV for x=0.6, which are in good agreement with previous reported data.

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