Origin of temperature-sensitive hole current at low gate voltage regime in ultrathin gate oxide
- 1 September 2000
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 88 (5) , 2872-2876
- https://doi.org/10.1063/1.1288169
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Field and thermionic-field emission in Schottky barriersPublished by Elsevier ,2002
- Polarity dependent gate tunneling currents in dual-gate CMOSFETsIEEE Transactions on Electron Devices, 1998
- Temperature dependence confirmation of tunneling through 2–6 nm silicon dioxideSolid-State Electronics, 1996
- 1.5 nm direct-tunneling gate oxide Si MOSFET'sIEEE Transactions on Electron Devices, 1996
- Temperature dependence of the Fowler–Nordheim current in metal-oxide-degenerate semiconductor structuresJournal of Applied Physics, 1995
- Hole injection SiO/sub 2/ breakdown model for very low voltage lifetime extrapolationIEEE Transactions on Electron Devices, 1994
- Temperature dependence of Fowler-Nordheim injection from accumulated n-type silicon into silicon dioxideIEEE Transactions on Electron Devices, 1993
- Temperature dependence of the current in SiO2 in the high field tunneling regimeJournal of Applied Physics, 1984
- Electron tunneling at Al-SiO2 interfacesJournal of Applied Physics, 1981
- Normalized thermionic-field (T-F) emission in metal-semiconductor (Schottky) barriersSolid-State Electronics, 1969