Microinhomogeneities in melt and vapor grown silicon
- 1 September 1971
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 10 (4) , 291-301
- https://doi.org/10.1016/0022-0248(71)90002-9
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Use of HCl Gettering in Silicon Device ProcessingJournal of the Electrochemical Society, 1971
- Doping of epitaxial siliconJournal of Crystal Growth, 1970
- Doping of epitaxial siliconJournal of Crystal Growth, 1970
- On the separation of bulk and surface components of lifetime using the pulsed MOS capacitorSolid-State Electronics, 1970
- VACANCY CLUSTERS IN DISLOCATION-FREE SILICONApplied Physics Letters, 1970
- Low-temperature epitaxial growth of doped silicon films and junctionsSolid-State Electronics, 1969
- Ultratrace determination of oxygen and carbon by charged particle activation analysisAnalytical Chemistry, 1969
- Carbon in Epitaxial SiliconJournal of the Electrochemical Society, 1969
- A Spreading Resistance Technique for Resistivity Measurements on SiliconJournal of the Electrochemical Society, 1966
- Epitaxial Growth of Silicon by Hydrogen Reduction of SiHCl[sub 3] onto Silicon SubstratesJournal of the Electrochemical Society, 1962