Annealing the di-carbon radiation damage centre in silicon
- 1 April 1989
- journal article
- letter
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 4 (4) , 327-330
- https://doi.org/10.1088/0268-1242/4/4/043
Abstract
The 969 meV 'G' absorption line, characteristic of the di-carbon radiation damage complex in silicon, is shown to anneal with kinetics that are determined by the size of the radiation dose. Silicon interstitials, released during the annealing from interstitial condensations, can strongly affect the annealing kinetics. The energy required to decompose a di-carbon complex is measured as 1700+or-50 meV.Keywords
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