Current-Drift Suppressed InP MISFETs with New Gate Insulator
- 1 October 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (10R)
- https://doi.org/10.1143/jjap.23.1408
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Chemical Vapor Deposition of Phosphorus Nitride and Related CompoundsJapanese Journal of Applied Physics, 1984
- Chemical Vapor Deposition of Insulating Films using Nitrogen TrifluorideJapanese Journal of Applied Physics, 1984
- Current Drift Phenomena and Spectroscopic Measurement Method for Insulator Trap Level Parameters in InP MISFETsJapanese Journal of Applied Physics, 1984
- InP high mobility enhancement MISFETs using anodically grown double-layer gate insulatorElectronics Letters, 1982
- Improved Interface in Inversion-Type InP-MISFET by Vapor Etching TechniqueJapanese Journal of Applied Physics, 1980