High-power 780 nm window diffusion stripe laser diodes fabricated by an open-tube two-step diffusion technique
- 1 May 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 26 (5) , 837-842
- https://doi.org/10.1109/3.55524
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Ten-thousand-hour operation of crank transverse-junction-stripe lasers grown by metal-organic chemical vapor depositionJournal of Lightwave Technology, 1986
- High-power GaAlAs window lasersElectronics Letters, 1986
- Catastrophic degradation level of visible and infrared GaAlAs lasersApplied Physics Letters, 1982
- Large optical cavity AlGaAs buried heterostructure window lasersApplied Physics Letters, 1982
- Current threshold uniformity of shallow proton stripe GaAlAs double heterostructure lasers grown by metalorganic-chemical vapor depositionApplied Physics Letters, 1982
- 15 mW Single Mode CW Operation of Crank Structure TJS Laser Diodes at High TemperatureJapanese Journal of Applied Physics, 1982
- Precisely controlled shallow p+ diffusions in GaAsApplied Physics Letters, 1981
- Accelerated facet erosion formation and degradation of (Al, Ga)As double-heterostructure lasersIEEE Journal of Quantum Electronics, 1980
- Stable transverse mode oscillation in planar stripe laser with deep Zn diffusionIEEE Journal of Quantum Electronics, 1979
- Room-temperature operation of Ga(1−x)AlxAs/GaAs double-heterostructure lasers grown by metalorganic chemical vapor depositionApplied Physics Letters, 1977