Optimized design of GaAs FET's for low-noise microwave amplifiers
- 30 June 1976
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 19 (6) , 463-470
- https://doi.org/10.1016/0038-1101(76)90008-3
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- X and Ku band GaAs m.e.s.f.e.t.Electronics Letters, 1972
- Noise behavior of Schottky barrier gate field-effect transistors at microwave frequenciesIEEE Transactions on Electron Devices, 1971
- Voltage-current characteristics of GaAs J-FET's in the hot electron rangeSolid-State Electronics, 1970
- Microwave Properties of Schottky-barrier Field-effect TransistorsIBM Journal of Research and Development, 1970
- Messung des übergangswiderstandes zwischen metall und diffusionsschicht in Si-planarelementenSolid-State Electronics, 1969