Properties of highly strained InGaAs/GaAs quantum wells for 1.2-μm laser diodes
- 23 September 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (13) , 2334-2336
- https://doi.org/10.1063/1.1509478
Abstract
The properties of 1.2-μm highly strained InGaAs quantum wells(QWs) grown on GaAs substrates have been analyzed. Optical gain spectra versus injection current and temperature, transparency current density, as well as other figures of merit were assessed from measurements on broad-area and ridge-waveguide lasers based on these QWs. Such active regions are of interest for a range of applications, including GaAs-based high-power lasers and vertical-cavity lasers for wavelengths beyond 1.2 μm.Keywords
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