12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells
- 24 September 2001
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (13) , 1965-1967
- https://doi.org/10.1063/1.1405812
Abstract
Highly strained InGaAs quantum wells were grown by metalorganic vapor-phase epitaxy. By lowering the growth temperature to 530 °C, a maximum photoluminescence wavelength of 1192 nm was achieved. High-power diode lasers with a maximum lasing wavelength of 1175 nm were fabricated. A continuous-wave output power of 12 W at a heat-sink temperature of 25 °C was obtained at a lasing wavelength of 1120 nm.Keywords
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