Long-wavelength InGaAs quantum wells grown without strain-induced warping on InGaAs compliant membranes above a GaAs substrate
- 15 February 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (7) , 1000-1002
- https://doi.org/10.1063/1.123435
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- InP-based 1.5 µm vertical cavity surface emittinglaser with epitaxially grown defect-free GaAs-based distributed Bragg reflectorsElectronics Letters, 1998
- Growth of InGaAs multi-quantum wells at 1.3 μm wavelength on GaAs compliant substratesApplied Physics Letters, 1998
- Photopumped lasing at 1.25 μm of GaInNAs-GaAs multiple-quantum-well vertical-cavity surface-emitting lasersIEEE Photonics Technology Letters, 1997
- Lattice engineered compliant substrate for defect-free heteroepitaxial growthApplied Physics Letters, 1997
- A critical thickness condition for a strained compliant substrate/epitaxial film systemApplied Physics Letters, 1996
- Overcoming the pseudomorphic critical thickness limit using compliant substratesApplied Physics Letters, 1994
- Analysis of temperature dependent optical gain of strained quantum well taking account of carriers in the SCH layerIEEE Photonics Technology Letters, 1994
- Dynamic model for pseudomorphic structures grown on compliant substrates: An approach to extend the critical thicknessApplied Physics Letters, 1993
- Extended Pseudomorphic Limits Using Compliant SubstratesMRS Proceedings, 1992
- New approach to grow pseudomorphic structures over the critical thicknessApplied Physics Letters, 1991