Imaging ion-bombarded III-V semiconductor surfaces: a scanning tunnelling microscopy study of InSb(100)

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Abstract
Scanning tunnelling microscopy (STM) has been used to produce images of InSb(100) prepared by in situ treatment of several cycles of low-energy argon ion bombardment and annealing. Electron diffraction studies, following annealing to 625 K, show the c(8*2) pattern associated with the In-rich reconstruction also observed during MBE growth. These STM images demonstrate the improved surface ordering with successive cycles resulting in atomically flat terraces over areas of the sample in excess of 1000 AA*1000 AA. The observed reduction of macroscopic morphological defects, such as In droplets, is discussed as a function of surface treatment.