High-performance scaled flash-type EEPROMs with heavily oxynitrided tunnel oxide films
- 1 January 1992
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 465-468
- https://doi.org/10.1109/iedm.1992.307402
Abstract
We have proposed a heavy oxynitridation (RTONO) technology of the tunnel oxide, and successfully applied it to the scaled flash-type EEPROMs. Excellent program and erase (P/E) endurance properties were obtained with much small window closure (less than 6%). In addition, good P/E speeds are also obtained. The SIMS results show that a large number of N atoms (>10/sup 20/ atoms/cm/sup 3/) are incorporated into SiO/sub 2/, while the number of H atoms is decreased. Accordingly, almost no increase of trapped charge by the P/E stress is induced. Thus, this technology is the key to providing flash-EEPROM in the submicron regime.Keywords
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