Effect of silicon doping on the optical and transport properties of InGaN/GaN multiple-quantum-well structures

Publisher Website
Google Scholar
Abstract
Temperature-dependent photoluminescence and transport measurements were performed on the In 0.13 Ga 0.87 N:Si/GaN:Si multiple-quantum-well(MQW) structures with different doping levels. By fitting the temperature-dependent emission energy of these samples using the band tail model, an obvious localization effect is observed in lightly dopedMQW structures. Correspondingly, the electron mobilities in these structures are significantly higher than those of undoped and heavily dopedMQW structures. Furthermore, when the localization effect is stronger, the mobility is higher.