A Method for Predicting VLSI-Device Reliability Using Series Models for Failure Mechanisms
- 1 June 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Reliability
- Vol. R-36 (2) , 234-242
- https://doi.org/10.1109/tr.1987.5222353
Abstract
A series model is used to determine the intrinsic reliability of an integrated circuit. An analysis of electromigration in the interconnect system of a 200 000 transistor VLSI device, shows that the failure rate exceeds 10 FIT (failures per 109 hours) within 2 years when operating at a temperature of 800 C. These results indicate the importance of fundamental wear-out mechanisms as factors in VLSI device reliability, under usual operating conditions. The analysis, as applied to a generic chip, predicts that temperature, burn-in, and complexity all adversely affect the device reliability. The paper demonstrates the feasibility of using the information available in the design database together with specific failure models to predict (during the design phase) the reliability of an IC. These techniques can be used to develop a CAD tool for reliability prediction.Keywords
This publication has 22 references indexed in Scilit:
- Electromigration lifetime sudies of submicrometer-linewidth Al-Cu conductorsIEEE Transactions on Electron Devices, 1984
- Submicrometer MOSFET Structure for Minimizing Hot-Carrier GenerationIEEE Journal of Solid-State Circuits, 1982
- Testing for MOS IC Failure ModesIEEE Transactions on Reliability, 1982
- Electromigration-Induced Failures in VLSI InterconnectsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1982
- Hot-electron injection into the oxide in n-channel MOS devicesIEEE Transactions on Electron Devices, 1981
- Low-Field Time-Dependent Dielectric IntegrityIEEE Transactions on Reliability, 1980
- Semiconductor Instability Failure Mechanisms ReviewIEEE Transactions on Reliability, 1980
- Linewidth dependence of electromigration in evaporated Al-0.5%CuApplied Physics Letters, 1980
- Electromigration of Al-Si Alloy Films8th Reliability Physics Symposium, 1978
- The reliability of semiconductor devices in the bell systemProceedings of the IEEE, 1974